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综述了近年来激光在集成电路纳米超浅结形成中的应用。指出了现有的广泛用于集成电路结形成的离子注入加快热退火技术,不能适应纳米超浅源、漏结的制备及其原因,分析了激光的独特优点以及用于超浅结形成的可行性。纳米超浅结要求结深和杂质分布精确可控,结电阻要尽可能低。着重强调了激光能量密度、脉冲宽度、作用时间等工艺参数与结深、杂质分布以及结电阻之间的密切关联。
Abstract：The application of laser in the formation of nano-scale uhra-shallow junctions of integrated circuits has been briefly summarized.It is indicated that the current technique of ion implantation with rapid thermal annea- ling widely used in the junction fabrication of integrated circuits will not meet the requirement of the formation of nano-scale ultra-shallow source or drain junctions and its reason.And the unique virtue of laser and its feasibil- ity of being adopted in the formation of nano-scale ultra-shallow junctions are analyzed.Nano-scale ultra-shal- low junctions demand that the junction depth and dopant distribution should be accurately controllable and the junction resistance should be as low as possible.The close correlations between laser energy density,pulse dura- tion,interaction time and junction depth,dopant distribution as well as junction resistance are mainly empha- sized in this paper.
[1]KERRIEN G,BOULMER J,DEBARRE D,et al.Ultrashallow,super-doped and box-like junctions realized by laser-induced doping[J].Applied Surface Science,2002,186:45—51.
[2]ISHIDA E,SIGMON T W,WEINER K H,et al.Ultra-shallow box-like profiles fabricated by pulsed ultraviolet-laser doping process [J].Journal of Vaccum Science & Tech-nology B,1994,12:399—404.
[3]WEINER K H,MCCARTHY A M,Fabrication of sub-40 nm p-n junctions for 0.18-μm MOS device applications using a cluster-tool-compatible,nanosecond thermal doping technique[C]//Proceedings SPIE,1994,2091:63—70.
[4]INUI S,NII T,MATUMOTO S,Precise control of sheet resistance in boron doping of silicon by excimer laser irradiation[J].IEEE Electron Device Letters,1991,12:702—703.
[5]SERA K,OKUMURA F,KANEKO S,et al.Excimer-laser doping into Si thin films [J].Journal of Applied Physics,1990,67(5):2359—2363.
[6]CAO MIN;TALWAR S,KRAMER K J,et al.A high-performance polysilicon thin-film transistor using XeCl excimer laser crystallization of pre-patterned amorphous Si films [J].IEEE Transactions on Electron Devices,1996,43(4):561—567.
[7]GAREY P G,BEZJIAN K,SIGMON T W,et al.Fabrication of submicrometer MOSFET's using gas immersion laser doping(GILD)[J].IEEE Electron Device Letters,1986,7(7):440—442.
[8]TANG Y F,SILVA S R P,ROSE M J.Super sequential lateral growth of Nd:YAG laser crystallized hydrogenated amorphous silicon [J].Applied Physice Letters,2001,78(2):186—188.
[9]CHONG Y F,PEY K L,WEE A T S et al.Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths [J].Applied Physice Letters,2000,76(22):3197—3199.
[10]WHELAN S,PRIVITERA V,ITALIA M,et al.Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing [J].Journal of Vaccum Science & Technology B,2002,20:644—649.
[11]何进，张兴，黄如．纳米CMOS器件中的超浅结和相关离子掺杂新技术的发展[J]．固体电子学研究与进展，2001，23(4)：389—396．
[12]成立，李春明，王振宇，祝俊．纳米CMOS器件中超浅结离子掺杂新技术[J]．半导体技术，2004，29(9)：30—34.
[13]BAERI P,RIMINI E,Laser annealing of silicon [J].Materials Chemistry and Physics,1996,46:169—177.
[14]WODE S-A,DETTMER K,KESSLER F R,Transformation of amorphous Si_(0.9) Ge_(0.1) and Si films by laser annealing [J].Thin Solid Films,1998,26:78—82.
[15]SAMESHIMA T,HARA M,USUI S.XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's [J].Journal of Applied Physics(PartⅠ),1989,28:1789—1793.
[16]ROBERTSON L S,WARNES P N,LAW M E,et al.The role of fluorine on reducing TED in boron implanted silicon [C]//Proceedings on Implantation Technology.2000:171—174.
[17]VENEZIA V C,HAYNES T E,AGARWAL A,et al.Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon [J].Applied Physice Letters,1999,74(9):1299—1301.
[18]SEONG-DONG KIM,CHEOL-MIN PARK,JASON C S WOO,Formation and control of box-shaped ultra-shallow junction using laser annealing and preamorphization implantation [J].Solid-State Electronics,2005,49:131—135.
[19]VENTURINI J,HERNANDEZ M,KERRIEN G,et al.Excimer laser thermal processing of ultra-shallow junction:laser pulse duration [J].Thin Solid Films,1998,453-454:145—149.
[20]JAIN S C,SCHOENMAKER W,LINDSAY R,et al.Transient enhanced diffusion of boron in Si [J].Journal of Applied Physics(PartⅠ),2002,91(11):8919—8941.
[21]Baeri P,CAMPISANO S U,FOTI G,et al.A melting model for pulsing-laser annealing of implanted semiconductors[J].Journal of Applied Physics(PartⅠ),1979,50(2):788—797.
[22]HERNANDEZ M,VENTURINI J,ZAHORSKI D,et al.Laser thermal processing for ultra shallow junction formation:numerical simulation and comparison with experiments [J].Apphed Surface Science,2003,208-209:345—351.
基本信息:
DOI：
中图分类号:TN249;TN405
引用信息:
[1]王光伟,宋延民,张建民等.激光在集成电路纳米超浅结形成中的应用综述[J].天津工程师范学院学报,2006(03):19-23.
基金信息:
天津市高校科技发展基金(JW20051201)